The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 26, 1983
Filed:
Jan. 26, 1982
Applicant:
Inventor:
G R Rao, Houston, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29591 ; 148187 ;
Abstract
A plurality of MOS transistors are formed as an integrated semiconductor device, adjacent transistors sharing a common source/drain region which is created by the edges of inverted regions beneath the gates of the transistors. These gates are first and second level polysilicon, with the second partly overlapping the first. On the opposite ends, the source and drain regions are formed by diffusion using the oxide under the first and second level poly as the diffusion mask.