The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 1983
Filed:
May. 16, 1980
Richard D Crisp, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
An MOS input buffer circuit for receiving transistor transistor logic (T.sup.2 L) logic level input signal includes a plurality of inverting amplifier stages. The input signal is applied to the gate electrode of a first field effect transistor in the first inverter stage and may assume a high logic level of as low as 2 volts and a low logic level of as high as 0.8 volts. In order to provide a stable switching point at the output of the first inverter stage, a feedback field effect transistor is coupled between the output of the first inverter stage and ground and has its gate electrodes coupled to a source of supply voltage (V.sub.DD). As V.sub.DD increases, the feedback field effect transistor will sink more current and thus alter the gain of the first amplifying stage to stabilize its switch point. To further enhance the tracking capabilities over temperature and process variations, the first two inverter stages are comprised entirely of field effect transistors of the enhancement type and having substantially equal channel lengths.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile