The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1983
Filed:
Mar. 21, 1980
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor integrated circuit with a short turn-off time in which a high breakdown voltage semiconductor element and a Schottky barrier diode are fabricated into a semiconductor substrate, is disclosed. In the integrated circuit, within a semiconductor substrate of a first conductivity type, a diffusion layer with a low impurity concentration disposed deeply which is used as one layer of a high breakdown voltage semiconductor element formed by a high breakdown voltage process and a diffusion layer with a high impurity concentration disposed more shallowly than the diffusion layer with a low impurity concentration, are formed so as to partially couple with each other. The diffusion layer with the high impurity concentration is used for both the ohmic contact for the electrode of the diffusion layer with the low impurity concentration and for a guard ring for a Schottky barrier diode. With such a construction, a Schottky barrier diode may be assembled into a high breakdown voltage semiconductor element with a minimum increase of area. Accordingly, the semiconductor integrated circuit obtained has a high degree of integration and a short turn-off time.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile