The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 12, 1983
Filed:
Jan. 21, 1980
Lloyd T Yuan, Rancho Palos Verdes, CA (US);
Yu-Wen Chang, Rancho Palos Verdes, CA (US);
Thomas G Mills, Carson, CA (US);
TRW Inc., Redondo Beach, CA (US);
Abstract
An active semiconductor device, such as a Gunn effect device, capable of operation at extremely high frequencies, fabricated in situ on a substrate that also serves as a dielectric waveguide to propagate energy from the device. In the embodiment disclosed, a Gunn effect diode is formed on a substrate of gallium arsenide (GaAs), together with a cavity region and a metalized heat sink layer permitting operation at relatively high power levels. A bias current is applied through a conductive strip and then through the cavity region to the diode, and a quarter-wave choke is provided in the conductive strip to prevent transmission of radio-frequency energy back along the strip.