The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1983
Filed:
Nov. 28, 1980
Applicant:
Inventor:
Norman E Moyer, Balboa, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365185 ; 365104 ; 357 23 ;
Abstract
In a CMOS FATMOS EEPROM, in which a floating gate and its associated tunneling region overlies the source to drain channel, device density is dramatically improved by sharing a source diffusion between adjacent FATMOS transistors and by reversing the function of the source and drain diffusions between reading and writing operations. During writing of a logic 'one' into an individual memory cell, the shared diffusion and the control gate are held at +18 volts while the well region is grounded and the other diffusion is selectively grounded.