The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1983
Filed:
May. 29, 1980
Applicant:
Inventor:
Muni M Mitchell, Huntington Station, NY (US);
Assignee:
General Instrument Corp., Clifton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 23 ; 357 55 ;
Abstract
A power, V-grooved MOSFET having V-grooves extending in two orthogonal dimensions, thereby forming a semi-continuous mesh grid configuration which maximizes the periphery of the MOSFET channels for a given area of silicon, thus providing higher output current and lower 'on resistance' for a given area than a conventional, interdigitated V-MOS power transistor having V-grooves running in only one dimension.