The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 1983
Filed:
Jul. 18, 1979
Applicant:
Inventors:
Tetsushi Sakai, Sayama, JP;
Yoshiji Kobayasi, Tokyo, JP;
Yousuke Yamamoto, Musashino, JP;
Hironori Yamauchi, Asaka, JP;
Assignee:
Nippon Telegraph & Telephone Public Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 29578 ; 29591 ; 2957 / ; 148187 ; 357 59 ; 357 91 ;
Abstract
In a semiconductor device such as a bipolar transistor and a field effect transistor of the type having a substrate, a doped polycrystalline silicon region selectively formed on the substrate and an insulating film overlying the polycrystalline silicon region, the region is shaped as mesa having side surfaces with a negative coefficient of gradient between the substrate and the top of the mesa.