The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1983
Filed:
Feb. 18, 1981
Koichi Kanzaki, Kawasaki, JP;
Minoru Taguchi, Omiya, JP;
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Abstract
An oxide layer is partially formed on an n-type region surrounded by a field oxide region. A base region of a switching transistor is formed in the n-type region using as a mask the oxide layer. Arsenic-doped polysilicon layers are selectively formed simultaneously on the surfaces of the oxide layer and the base region. Using the polysilicon layers as a mask, the emitter and collector regions of an injector transistor and the external base region of a switching transistor are formed in the n-type region and the base region respectively. Arsenic doped into the polysilicon layers is diffused into the base region, so that the collector regions of the switching transistor are self-aligned with the polysilicon layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile