The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1983
Filed:
Sep. 03, 1980
Kazuyoshi Shinada, Yokohama, JP;
Satoshi Shinozaki, Yokohama, JP;
VLSI Technology Research Association, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device comprising a step of forming a desired opening in an insulating film formed on a single-crystalline semiconductor substrate, a step of forming an impurity-doped amorphous or polycrystalline semiconductor layer to cover the surface of said insulating film and the exposed surface of said semiconductor substrate in said opening, and a step of irradiating said semiconductor layer with a laser beam to let a portion of said semiconductor layer on said insulating film be polycrystallized or remain polycrystalline and let a portion of said semiconductor layer on said semiconductor substrate be single-crystallized to form a junction between said single-crystallized semiconductor layer portion and said semiconductor substrate.