The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 1983
Filed:
Apr. 27, 1981
Applicant:
Inventors:
Terumoto Nonaka, Hamamatsu, JP;
Tadahiko Hotta, Hamamatsu, JP;
Assignee:
Nippon Gakki Seizo Kabushiki Kaisha, Hamamatsu, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148187 ;
Abstract
A method of manufacturing an SIT or SITL device, comprising simultaneous formation of a gate doping aperture and contact apertures for a source and a drain. Firstly, a gate region is doped through the doping aperture with the contact apertures being covered by a mask. Then, a source region is doped so as to be in self-alignment relation relative to the gate region and a source contact portion is doped so as to be in self-alignment relation relative to the source region and the gate region, whereby the mask alignments are eliminated and packing density is enhanced.