The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 1983
Filed:
Feb. 13, 1981
Kazumasa Nawata, Kawasaki, JP;
Hirokazu Suzuki, Yamato, JP;
VLSI Technology Research Association, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device for simultaneously forming a plurality of diffused regions of selectively different diffusion depths, comprises forming polycrystalline semiconductor layers of corresponding, selectively different depths on the semiconductor substrate surface provided with a diffusion mask having a plurality of diffusion windows. By the impurity diffusion into the substrate through the windows at the polycrystalline semiconductor layer interface with the substrate, a comparatively shallow diffused region and a comparatively deep diffused region are formed simultaneously by a single diffusion process, respectively, under the comparatively thick polycrystalline semiconductor layer and the comparatively thin polycrystalline semiconductor layer.