The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1983
Filed:
Nov. 06, 1981
Applicant:
Inventors:
Robert E Nahory, Lincroft, NJ (US);
Benjamin Tell, Aberdeen, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; B05D / ;
U.S. Cl.
CPC ...
427 38 ; 2041 / ; 427 39 ;
Abstract
A method of growing a water insoluble native plasma oxide on an In.sub.0.53 Ga.sub.0.47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.