The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1983
Filed:
Feb. 22, 1982
Applicant:
Inventor:
Lawrence A Goodman, Plainsboro, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 29580 ; 29578 ; 148187 ;
Abstract
A MOSFET device having minimized parasitic bipolar effects comprises a substrate having a surface at which source and drain regions are spaced so as to define a channel portion in a body region. The channel portion is formed in a relatively low conductivity portion of the body region, the remainder of the body region being of higher conductivity. A gate overlies the channel portion, and a method for automatically aligning the gate to a grooved MOSFET is described.