The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 1983
Filed:
Dec. 22, 1980
Pieter J Jochems, Eindhoven, NL;
U.S. Philips Corporation, Tarrytown, NY (US);
Abstract
A method is disclosed for providing in a self-registering manner underpasses in a semiconductor device having insulated gate field effect transistors, in which the underpasses below the field oxide connect electrode zones of the field effect transistors together. A first part of field oxide is obtained by local oxidation by means of an oxidation mask. After a first oxidation treatment, a part of the oxidation mask is removed and the semiconductor body is doped locally with As or Sb atoms for the underpasses. The aperture in the doping mask coincides substantially with the part of the oxidation mask removed. This avoids critical alignment in that the masking effect of the first part of the field oxide is used. After the doping treatment, a second oxidation treatment, is carried out to complete the field oxide.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile