The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 1983
Filed:
Nov. 19, 1980
Applicant:
Inventor:
Shinji Saitoh, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
2956 / ; 2957 / ; 2957 / ; 29580 ; 148175 ; 148187 ; 357 34 ;
Abstract
A method for producing a semiconductor device comprises the steps of selectively etching a part of a second conductivity type semiconductor layer formed on a first conductivity type semiconductor substrate where an isolating oxide layer is to be formed; introducing a first conductivity type impurity into a substrate contact forming part extending from the bottom of said etched part, by way of the side surface thereof, to the top surface of said second conductivity type semiconductor layer to form a substrate contact; thermally oxidizing said etched part to form an isolating oxide layer and forming a semiconductor element in said second conductivity type semiconductor layer.