The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 1983
Filed:
Jul. 20, 1981
Jih-Chang Lien, Sugarland, TX (US);
Te-Long Chiu, Houston, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Integrated circuit resistor elements ideally suited for load devices in static MOS RAM cells are made in second-level polycrystalline silicon by an ion implant step compatible with a self-aligned N-channel silicon-gate process. The second-level polysilicon is insulated from first-level polysilicon by multi-layer insulation; first, a thermal oxide layer provides better edge breakdown characteristics for transistors, then secondly a layer of doped deposited oxide provides improved step coverage, and finally an undoped deposited oxide is used to prevent out diffusion from doped oxide to second level polysilicon which would change the characteristics of the resistors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile