The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1983
Filed:
Apr. 07, 1980
Fujitsu Limited, Kanagawa, JP;
Abstract
This invention discloses a structure of a transistor suitable for high frequency and high output power. An emitter region having a first conductivity type is formed in a base region having opposite conductivity type in contact with a collector region having the first conductivity type. Said emitter region is divided into a plurality of active emitter regions by a plurality of isolation regions having said opposite conductivity type which are formed in said emitter region and said active emitter regions are connected in parallel by an electrode such as for lead-out. The isolation regions may be used as stabilizing resistors and connected between each said active emitter region and the electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile