The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1983
Filed:
Dec. 04, 1980
Applicant:
Inventors:
Makoto Azuma, Yokohama, JP;
Junko Akagi, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148187 ; 148-15 ; 148189 ;
Abstract
A method for manufacturing power switching devices such as thyristors and power transistors comprising the steps of forming impurity diffused layers of one conductivity type and of the opposite conductivity type in a semiconductor substrate of one conductivity type; forming a film containing phosphorus on the substrate; diffusing lifetime killer atoms into the substrate; and forming electrodes on the substrate.