The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 1983
Filed:
Oct. 27, 1980
Bernard Roger, Carpiquet, FR;
U.S. Philips Corporation, New York, NY (US);
Abstract
A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The method of the invention is particularly applicable to making mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile