The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 1983
Filed:
Mar. 21, 1980
Daniel C Guterman, Houston, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Polycrystalline silicon resistor elements are formed in MOS integrated circuits by a method which requires no additional mask and etch steps other than a standard double-level poly process. The resistors are defined in first level polysilicon which also forms floating gates in FAMOS devices. The resistors are masked by the second level poly which is patterned to define control gates for the FAMOS cells at the same time as the resistor mask is created. The first level poly is implanted at a level which produces the desired resistivity, which is same as the necessary doping level for the floating gates. FAMOS cells are floating gate MOS transistors which are electrically programmable and may also be electrically erasable or electrically alterable.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile