The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1983
Filed:
Nov. 03, 1980
Victor Wang, Agoura, CA (US);
Joseph A Wysocki, Oxnard, CA (US);
Gregory L Tangonan, Oxnard, CA (US);
Robert L Seliger, Agoura, CA (US);
Hughes Aircraft Company, Culver City, CA (US);
Abstract
Alloys suitable for use in liquid metal field ionization ion sources are provided. Such sources include an anode electrode for supporting an ion emitter comprising an alloy in the liquid state. The source further comprises means for generating an ionizing electric field and a reservoir for the liquid metal, ions of which are to be emitted by the source. The alloys are selected from the group consisting of (a) metal-metalloid alloys comprising about 10 to 30 atom percent of at least one metalloid element, the balance at least one transition metal element, (b) early transition-late transition alloys comprising about 30 to 85 atom percent of at least one early transition metal, the balance at least one late transition metal, and (c) Group II alloys comprising about 35 to 80 atom percent of at least one Group II element, the balance at least one metal element. Ions generated in liquid metal ion sources form a high brightness ion beam, which permits focusing a beam of emitted ions to a submicrometer spot. The ions may be used to alter material properties by ion implantation such as to dope semiconductors, to form ohmic contacts, to improve wear and corrosion resistance in metal surfaces and by sputter etching thin films such as metals, dielectrics and semiconductors.