The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1982
Filed:
Oct. 16, 1980
Applicant:
Inventors:
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
313377 ; 313107 ;
Abstract
A secondary electron multiplication target includes first and second porous layers laminated on a signal electrode. The first porous layer is formed of MgF.sub.2 which, having a high secondary electron emitting ratio and a dielectric constant of 6 or less, produces a great number of secondary electrons in response to photoelectrons incident thereupon across the signal electrode. The second porous layer is formed of carbon which has a low secondary electron emitting ratio and hence a high crossover potential, as well as a dielectric constant of 6 or less.