The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1982
Filed:
Jun. 09, 1980
Hitachi, Ltd., Tokyo, JP;
Hitachi Ome Electronic Co., Ltd., Tokyo, JP;
Abstract
The collectors of differential pair transistors having their emitters connected to each other are connected to a positive power source voltage via respective load resistors. The emitters are connected to a negative power source voltage via a current source transistor. The base bias voltage of the current source transistor is supplied from a bias circuit operating on the difference voltage between the positive power source voltage and the negative power source voltage. When the positive power source voltage drops, the base bias voltage of the current source transistor drops in response thereto. Hence, the value of a current flowing through the current source transistor decreases. Due to this decrease of the current, the voltage drop of the load resistors decreases, thereby off-setting a low level potential of the collector output signals of the differential pair transistors. Thus, the differential pair transistors are prevented from being driven into saturation.