The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1982
Filed:
Nov. 26, 1980
Junichi Nishizawa, Sendai, JP;
Handotai Kenkyu Shinkokai, Sendai, JP;
Abstract
A semiconductor image sensor employing static induction transistors having a nonsaturating current-voltage characteristic providing a high degree of linearity over a wide range of optical input intensities and a high operating speed. A plurality of high resistance channel regions are formed on a substrate region. Low resistance semiconductor storage regions of the same conductivity type are formed on corresponding ones of the channel regions and gates which form controllable potential barriers are provided around the channel regions. An insulating film is formed over the low resistance storage regions. Electrically conductive bit line electrodes are formed over the insulating film and electrical conductive word lines are connected to corresponding ones of the gates.