The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1982
Filed:
Aug. 26, 1977
Pallab K Chatterjee, Dallas, TX (US);
Aloysious F Tasch, Jr, Richardson, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A charge coupled device memory is disclosed which includes a plurality of stages having increased charged storage capacity and decreased leakage current. Each stage is comprised of a semiconductor substrate of a first-type conductivity having a first surface. An insulating layer of uniform thickness lies on the first surface. A charge transfer channel extends through each stage. Phase electrodes lie on the insulating layer transversely to the channel. The semiconductor substrate under the phase electrodes is divided into barrier regions and adjacent well regions bounded by the channel. A dopant layer of a second-type conductivity lies in each of the well regions relatively near to the first surface. An enhanced first-type conductivity dopant layer lies in the well regions and the barrier regions relatively far from the surface having a doping which is greater than the doping of the first-type conductivity semiconductor substrate.