The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 1982

Filed:

Dec. 12, 1979
Applicant:
Inventors:

Marc H Brodsky, Mt. Kisco, NY (US);

Bruce A Scott, Pleasantville, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427 39 ; 427 86 ;
Abstract

Disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films.


Find Patent Forward Citations

Brodsky, Marc. (1982). Method for depositing silicon films and related materials by a glow (U.S. Patent No. 4363828). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4363828

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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