The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1982
Filed:
Apr. 01, 1981
Yoshihiro Matsuo, Neyagawa, JP;
Gen Itakura, Hirakata, JP;
Shoichi Ikebe, Miyazaki, JP;
Tatsuya Wada, Moriguchi, JP;
Matsushita Electric Industrial Co. Ltd., Osaka, JP;
Abstract
Grain boundary layer dielectric ceramic compositions comprising semiconductive ceramic grains having a composition of 50.23 to 49.47 mol % of SrO and CaO, 49.72 to 50.23 mol % of TiO.sub.2, 0.05 to 0.3 mol % of Nb.sub.2 O.sub.5, substantially each of said grains being surrounded by grain boundary layer dielectric materials which are formed by grain boundary diffusion of a mixture having a composition of 93.5 to 8.5 mol % of Bi.sub.2 O.sub.3, 4.5 to 45 mol % of Cu.sub.2 O, 0.5 to 4 mol % of MnO.sub.2, 1 to 8.5 mol % of B.sub.2 O.sub.3, 0.5 to 17 mol % of La.sub.2 O.sub.3, and below 17 mol % of TiO.sub.2. These ceramic compositions provide capacitors having a temperature coefficient of capacitance less than .+-.15%, an apparent dielectric constant higher than 35,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 500 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.10%, an apparent dielectric constant higher than 20,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm; or capacitors having a temperature coefficient of capacitance less than .+-.5%, an apparent dielectric constant higher than 5,000, a dielectric loss less than 0.01 and a breakdown voltage higher than 700 V/mm.