The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1982
Filed:
Jan. 19, 1981
Applicant:
Inventors:
David B Fraser, Berkeley Heights, NJ (US);
Eliezer Kinsbron, Highland Park, NJ (US);
Frederick Vratny, Berkeley Heights, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
156643 ; 29591 ; 156657 ; 1566591 ; 1566611 ; 357 71 ;
Abstract
It is known to deposit a refractory metal silicide on a polysilicon gate layer to form a low-resistivity composite structure. For VLSI MOS devices, very-high-resolution patterning of the composite structure is required. In accordance with this invention, a silicide pattern is formed on polysilicon by a lift-off technique. In turn, the patterned silicide is utilized as a mask for anisotropic etching of the underlying polysilicon. High-conductivity composite silicide-on-polysilicon gate structures for VLSI MOS devices are thereby achieved.