The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1982
Filed:
Jun. 30, 1981
Applicant:
Inventors:
Brian H Desilets, Wappingers Falls, NY (US);
Thomas A Gunther, Hopewell Junction, NY (US);
Assignee:
International Business Machines Corp., Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156627 ; 156643 ; 156646 ; 156653 ; 156657 ; 156345 ; 2041 / ; 204298 ; 252 791 ;
Abstract
As etching progresses from one layer of material to another in reactive ion etching systems, the partial pressures of the reaction chamber gas components change. In constant pressure reactive ion etching systems, changes in chamber pressure are corrected by changes in the etchant species flow rate into the reaction chamber. By monitoring flow rate, information is obtained which may be used to identify the points where partial pressures change, and latter may, in turn, be used to derive etching points in the material being etched.