The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1982
Filed:
Aug. 13, 1979
Toshihisa Tsukada, Tokyo, JP;
Eiichi Maruyama, Kodaira, JP;
Toru Baji, Kokubunji, JP;
Saburo Ataka, Tokyo, JP;
Yoshinori Imamura, Hachioji, JP;
Akira Sasano, Tokyo, JP;
Masaharu Kubo, Hachioji, JP;
Norio Koike, Tokyo, JP;
Shusaku Nagahara, Hachioji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a solid-state imaging device having a plurality of photosensitive portions and a semiconductor substrate which includes at least scanning means for scanning the photosensitive portions, the photosensitive portions including a layer of a photosensitive material overlying the semiconductor substrate and a transparent electrically conductive film overlying the photosensitive material layer; a solid-state imaging device characterized in that the photosensitive material is an amorphous material whose indispensable constituent is silicon and which contains hydrogen. The hydrogen content of the photosensitive material is preferably 5 atomic-% to 30 atomic-%, especially 10 atomic-% to 25 atomic-%.