The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1982
Filed:
Nov. 19, 1981
Willy Beinvogl, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
Circuit structures consisting of layers composed of metal silicides or metal silicide-polysilicon are produced by reactive sputter etching with sulfur hexafluoride (SF.sub.6) as the etching gas. In a practice of the invention, the etching process occurs in two steps whereby the first etching step is carried out with a high frequency power of more than 0.3 W/cm.sup.2 and the second etching step is carried out with a high frequency power of less than 0.2 W/cm.sup.2. This method is strictly anisotropic, even when a photosensitive resist is used as an etching mask, and is useful in the manufacture of fully integrated semiconductor circuits in MOS technology with metal silicide layers for reduction of the ohmic resistance of polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile