The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 1982
Filed:
May. 23, 1980
Applicant:
Inventors:
Luis Figueroa, Woodland Hills, CA (US);
Charles W Slayman, Newbury Park, CA (US);
Huan-Wun Yen, Westlake Village, CA (US);
Assignee:
Hughes Aircraft Company, Culver City, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B / ;
U.S. Cl.
CPC ...
350 9612 ; 350 9614 ; 357 30 ;
Abstract
A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provides for efficient coupling of incident optical radiation into the active region, employing confinement and waveguiding regions lying in the plane of the device and adapted to guide incident optical radiation to the active region. GaAs photoconductors are also provided by eliminating the gate electrode.