The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 1982

Filed:

Sep. 19, 1978
Applicant:
Inventors:

Hiroshi Hada, Tokyo, JP;

Tsutomu Hirayama, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
307254 ; 307231 ; 307479 ; 307540 ;
Abstract

A first diode having a polarity opposite to the diode characteristic between the emitter and base electrodes is connected across these electrodes of a first transistor, a resistor having a high resistance is connected between the collector and the base electrodes of the first transistor and a first source of high reference potential is connected to the collector electrode. The collector electrode of a second transistor is connected to the base electrode of the first transistor and to a second diode and the emitter electrode of the second transistor is connected to a second source of low reference potential. A high frequency pulse signal is applied to the collector electrode of the second transistor through the second diode, and a pulse data signal containing a high frequency pulse signal synchronous with the first mentioned high frequency pulse is applied to the base electrode of the second transistor thereby producing an amplified pulse data signal containing a high frequency pulse signal corresponding to a data input signal on the emitter electrode of the first transistor.


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