The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1982
Filed:
May. 22, 1980
Applicant:
Inventor:
Jun-ichi Nishizawa, Sendai, JP;
Assignee:
Handotai Kenkyu Shinkokai, Sendai, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
118 59 ; 118412 ; 118415 ;
Abstract
An apparatus for producing a semiconductor device of epitaxial growth on a substrate utilizing successive solution growth, in which materials to be successively deposited are being dissolved in bore portions respectively interconnecting between holes of the higher temperature portion and holes of the lower temperature portion in a boat, and in which a cooling jig is coupled with the substrate provided at the hole of the lower temperature portion to effectively conduct substantially main part of heat of the dissolved materials through the substrate.