The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1982
Filed:
Nov. 03, 1980
Applicant:
Inventor:
Ven Y Doo, San Jose, CA (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148174 ; 29571 ; 29590 ; 148-15 ; 357 59 ; 427 86 ;
Abstract
Disclosed is a process for reducing microcracks and microvoids in the formation of polycrystalline (polysilicon) structures from initial layers of amorphous silicon by annealing. In annealing of amorphous silicon to the polycrystalline form, the crystal grains are thickness limited; and thus by maintaining the thickness below 1000 angstroms, the spacing between contrasting material forming the crystal grains can be minimized on anneal. The resultant equiaxial grains are used as seed crystals for epi-like growth of silicon from them into the required or desired layer thickness.