The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1982
Filed:
Oct. 29, 1979
Minami Takeuchi, Tokyo, JP;
Abstract
A reverse conducting thyristor includes a thyristor section, a diode section and a semiconductor separator section for electrically separating both the sections. The thyristor section includes: a first region of first conductivity type, a second region of a second conductivity type, a third region of the first conductivity type, a main emitter region of the second conductivity type, an auxiliary emitter region formed, with intervention of the exposed portion of said third region, facing at least a part of the periphery of said main emitter region which does not contact the separate section and a cathode electrode, an auxiliary gate electrode contacting the auxiliary emitter region and enclosing, with intervention of the exposed portion of the third region, at least a part of the periphery of said main emitter region which does not contact the separate section, and a main gate electrode formed on the exposure surface of the third region contacting the side wall of the auxiliary emitter region which does not face the main emitter region. The respective components are successively layered on a first electrode acting as an anode electrode. The diode section includes a fourth region of the second conductivity type formed on the first or anode electrode, a fifth region of the first conductivity type formed on the fourth region, and a second electrode formed on the fifth region and connected to the cathode electrode. The separate section includes a sixth region formed on the first electrode and of the first conductivity type, a seventh region formed on the sixth region and of the second conductivity type and an eighth region formed on the seventh region and of the first conductivity type. The resistance values of the semiconductor layers between the cathode electrode and the second electrode and between the cathode electrode and the auxiliary gate electrode are each 2 to 18 Ohms.