The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1982
Filed:
Nov. 18, 1980
Cheng-Chi Wang, Thousand Oaks, CA (US);
Muren Chu, Thousand Oaks, CA (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
Disclosed is a method of growing a layer of CdTe on HgCdTe by liquid phase pitaxy. The solution for growth comprises Sn and Hg with a small amount of CdTe. A typical composition is Sn:Hg:CdTe=36:5:0.15 parts by weight. The growth temperature is a function of the amount of CdTe in solution. For the typical composition stated, the growth temperature is about 520.degree. C. The layers were grown on (111)A oriented CdTe substrates. The HgCdTe epilayer with a desired Cd composition is first grown, and an epilayer of CdTe is subsequently grown on the HgCdTe epilayer. The cross-diffusion at the CdTe/Hg.sub.1-x Cd.sub.x Te interface has been as small as 0.3 .mu.m for the thin CdTe epilayer. The first CdTe/HgCdTe heterojunction sensitive to .about.2.8 .mu.m at 77.degree. K. has been demonstrated.