The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1982
Filed:
Jan. 26, 1981
Applicant:
Inventor:
Bela Molnar, Alexandria, VA (US);
Assignee:
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148175 ; 357 61 ;
Abstract
A method of annealing both N and P-type ion-implanted GaAs and InP semiconductors by using a close-contact capping technique. A flat polished ion-implanted surface on a gallium arsenide (GaAs) or indium phosphide (InP) semiconductor is placed in face-to-face contact with a non-reactive flat surface such as Si.sub.3 N.sub.4, SiO.sub.2, AlN, or identical semiconductor material, and annealed at selected elevated temperatures and time dependent upon ion concentration. The annealed semiconductor material, usually in the form of a wafer, is allowed to cool to room temperature for further processing.