The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1982
Filed:
Sep. 15, 1980
Applicant:
Inventor:
William R Hunter, Garland, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 148-15 ; 148187 ; 148188 ;
Abstract
A method for fabricating a semiconductor device of relatively small scale. A conductivity layer is deposited on a substrate of a polarity. Regions of opposite polarity are partially formed on either side of the conductor layer. Vertical layers are formed to partially cover the regions of opposite polarity and are located adjacent to the conductor layer. Extensions of the regions of opposite polarity are formed such that a portion of the extension is defined by the location of the vertical layers.