The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1982
Filed:
Feb. 28, 1980
Peter O Shafer, Auburn, NY (US);
E Duane Wolley, Auburn, NY (US);
General Electric Company, Syracuse, NY (US);
Abstract
A latching transistor is described having both high current capacity and high turn-off gain. A selectively shorted anode emitter provides a four-layer structure capable of sustaining current flow only under those portions of a cathode emitter adjacent interdigitated gate fingers and particularly not in the center of the cathode emitter fingers or beneath contact areas. Additionally, a control region is provided for conveniently adjusting the amount of anode emitter shorting for optimizing turn-off speed, foward voltage drop, and gate triggering characteristics.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile