The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1982
Filed:
Aug. 05, 1980
William R Hunter, Garland, TX (US);
Al F Tasch, Jr, Richardson, TX (US);
Thomas C Holloway, Garland, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for patterning a submicrometer substrate element which is smaller than the reproducible resolution accuracy of optical lithography. A series of layers is deposited upon a top layer pattern using standard methods. An edge of the top layer is positioned at or near where the required submicrometer element is to be patterned. A cavity is formed in one of the intermediate layers by removing that intermediate layer in such a fashion that the layer underneath the edge of the top layer is removed. Next, a conformal layer is deposited upon the structure so that the conformal layer fills the cavity. Then the conformal layer is removed and each of the other layers is sequentially removed in such a fashion that only that portion of the conformal layer that occupied the cavity remains, together with any layers that occupy the space underneath the cavity. The remaining layers are the mask for further patterning.