The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1982
Filed:
Feb. 05, 1980
Kuraray Co., Ltd., Okayama, JP;
Taoayuki Matsuo, Sendai, JP;
Abstract
A selective chemical sensitive field-effect transistor device for use in detection and measurement of chemical properties of substances to which the device is exposed is disclosed. The chemical sensitive FET device comprises a semiconductor substrate, at least one pair of spaced apart diffusion layers formed on one surface of the semiconductor substrate and forming source and drain regions, respectively, and a double layer structure consisting of a silicon oxide layer and an electrically insulating layer overlaying the silicon oxide layer. A gate region located on a portion of the surface of the semiconductor substrate between the diffusion layers is overlaid with a chemical selective membrane adapted to interact with certain substances. A method for the manufacture of the above described FET device is also disclosed.