The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1982
Filed:
Aug. 29, 1980
Applicant:
Inventors:
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 19 ; 357 16 ; 357 17 ; 357 30 ; 357 55 ;
Abstract
A semiconductor light-emitting device comprising a semiconductor substrate of GaAs and a crystal layer of Ga.sub.1-x Al.sub.x As formed by epitaxial growth on the semiconductor substrate. The x value in the crystal layer is gradually decreased in accordance with the development of the epitaxial growth. A light ray emitted from a light-emitting portion in the crystal layer is bent in accordance with the distribution of the x value, so that the light ray can reach a light-emitting surface of the crystal layer. According to the invention, a groove is provided on the surface of the crystal layer so that the light-launching efficiency is increased over that of the prior art.