The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1982
Filed:
Apr. 20, 1981
Applicant:
Inventor:
Adir Jacob, Framingham, MA (US);
Assignee:
LFE Corporation, Clinton, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156657 ; 1566591 ; 156345 ; 2041 / ; 204298 ; 252 791 ;
Abstract
A process for etching polysilicon material preferentially over silicon oxide. The process is anisotropic and employs a moderate to low pressure of Freon 11 (CFCl.sub.3) in an RF plasma discharge. In a second embodiment helium is mixed with the Freon 11 to inhibit degradation of the photoresist mask.