The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1982
Filed:
Aug. 25, 1980
Paul C Moutou, Paris, FR;
Jacques Montel, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
A semiconducting diode utilizing the transit time of electrical charge carriers in a semiconductor medium, having an input structure formed by a matrix of micropoints, said matrix consisting of a plurality of microscopic contacts separated by an insulating layer. The diameter of each contact is of the order of 0.5 to 5 micrometers, the distance between the closest contacts being of the order of 0.5 to 15 micrometers. The contacts are made of metal or of an alloy of low resistivity or of a semiconductor material generally doped more heavily than the layer of the semiconductor lying under the microscopic contact. The result of such a structure is an increase in efficiency attributable to the reduction in avalanche voltage or to a better injection by tunnel effect.