The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 1982
Filed:
May. 12, 1980
Applicant:
Inventors:
Hiromitsu Takagi, Shiga, JP;
Shotaro Umebachi, Kyoto, JP;
Gota Kano, Nagaokakyo, JP;
Iwao Teramoto, Ibaraki, JP;
Assignee:
Matsushita Electronics Corporation, Kadoma, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 29578 ; 29579 ; 148-15 ; 148188 ; 156628 ; 156644 ; 156653 ; 156657 ; 357 22 ; 357 91 ;
Abstract
A novel self-align type method of making an FET with a very short gate length and a good high frequency characteristic, and a low noise characteristic, the method comprising the steps of: