The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1982
Filed:
Oct. 05, 1979
Graham S Tubbs, Houston, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
An MOS read only memory or ROM of small cell size is formed by a process compatible with standard N-channel silicon gate ROM manufacturing methods. In an array of rows and columns of the cells, the row address lines and gates are polysilicon, and column lines forming output and ground are defined by elongated N+ regions which are partly diffused and partly implanted since the column lines cross beneath the polysilicon row address strips. Each potential MOS transistor in the array is programmed to be a logic '1' or a '0' by the presence or absence of moat beneath the gate of a cell.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile