The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1982
Filed:
Dec. 10, 1980
Thomson-CSF, Paris, FR;
Abstract
Successive two-trip traversals of charges between gates G.sub.0 and G.sub.2 make it possible to obtain beneath gates G.sub.1 and G.sub.2 quantities of charges equal to Q.sub.R, Q.sub.R /2, Q.sub.R /2.sup.2 . . . Q.sub.R /2.sup.i. A readout device for reading charges and connected to gates G.sub.2 and G.sub.4 generates voltages V.sub.R and V.sub.Ri =a.sub.0 .multidot.V.sub.R +a.sub.1 .multidot.V.sub.R /2+ . . . +a.sub.i-1 .multidot.V.sub.R /2.sup.i-1 +V.sub.R /2.sup.i which are compared with a voltage sample V.sub.x to be coded in order to determine by successive approximations the coefficients a.sub.0 . . . a.sub.n which are equal to 0 or to 1 such that V.sub.x =a.sub.0 .multidot.V.sub.R +a.sub.1 .multidot.V.sub.R /2+ . . . +a.sub.n .multidot.V.sub.R /2.sup.n. Depending on the value of a.sub.i, each quantity of charges Q.sub.R /2.sup.i stored beneath gate G.sub.1 is removed beneath diode D.sub.e or stored beneath gate G.sub.3 and then transferred beneath gate G.sub.4.