The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 1982
Filed:
Oct. 09, 1980
Applicant:
Inventors:
John M Young, Harlow, GB;
Peter D Scovell, Chelmsford, GB;
Assignee:
ITT Industries Inc., New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29585 ; 29586 ; 148187 ; 357 91 ; 427 531 ;
Abstract
A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450.degree. and 900.degree. C. and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device (17) may be heated on a graphite element (14) mounted between electrodes (15) in an inert atmosphere in a chamber (11). The process may be enhanced by the application of optical radiation from a Xenon lamp (19).