The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 1982
Filed:
Mar. 26, 1981
Applicant:
Inventors:
Ming L Tarng, Mercerville, NJ (US);
Walter A Hicinbothem, Jr, Levittown, PA (US);
Assignee:
RCA Corporation, New York, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
156628 ; 29590 ; 156653 ; 156657 ; 156662 ; 357 54 ; 357 59 ; 427 91 ; 427253 ; 427307 ;
Abstract
A method for depositing a refractory on a semiconductor substrate passivated with silicon dioxide and/or oxygen doped polycrystalline silicon is disclosed. The usual undercutting of the oxygen doped polycrystalline silicon or of the silicon substrate at the edge where it meets the oxide is prevented by depositing a layer of phosphorus doped polycrystalline silicon over the passivation material before the metal is deposited.